氩离子注入对 CdSe 纳米线性能的改性,Journal of Electronic Materials

<br>氩离子注入对 CdSe 纳米线性能的改性,Journal of Electronic Materials

硒化镉 (CdSe) 是一种属于 II-VI 族的直接带隙半导体,在电磁波谱的可见光范围内工作。由 CdSe 组成的纳米线在各种光电应用中具有巨大的潜力。采用离子注入是一种非常有吸引力的技术,它允许将掺杂剂受控地引入到任何晶格中,并且它基于既定的原理。在此背景下,目前的研究重点是氩离子注入对直径为80 nm的硒化镉纳米线的影响。纳米线是通过模板辅助电沉积方法使用孔径为 80 nm、厚度为 10 µm 的聚碳酸酯膜合成的。三电极设置促进了它们的制造。随后,具有 4+ 电荷态和 1 MeV 能量的氩离子以不同的注量水平注入合成的纳米线中,范围从 10 11 到 10 13 离子/cm < b2> 。离子注入过程是在印度新德里大学间加速器中心低能离子注入设施的辐射室中进行的。采用物质离子停止和范围 (SRIM) 代码模拟来确定最佳注入参数。成分分析证实氩离子成功并入 CdSe 晶格中。值得注意的是,扫描电子显微镜显示尽管植入,纳米线形态没有变化。 X 射线衍射分析显示衍射峰的 2θ 位置没有变化,但表明其强度存在变化。此外,随着离子注量的增加,植入的纳米线表现出吸光度增加和电导率提高。 这些发现证明了氩离子注入在改变 80 nm 直径 CdSe 纳米线的光学和电学特性方面的有效性。

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Modification of the Properties of CdSe Nanowires by Argon Ion Implantation

Cadmium selenide (CdSe) represents a direct-bandgap semiconductor belonging to the II–VI group, operating within the visible range of the electromagnetic spectrum. Nanowires composed of CdSe hold significant potential for various optoelectronic applications. Employing ion implantation is an immensely appealing technique, which allows for a controlled introduction of dopants into any lattice, and it is based on well-established principles. In this context, the current investigation focuses on the impact of argon ion implantation on cadmium selenide nanowires with a diameter of 80 nm. The nanowires were synthesized via a template-assisted electrodeposition method using polycarbonate membranes with 80 nm pores and 10 µm thickness. A three-electrode setup facilitated their fabrication. Subsequently, argon ions with a 4+ charge state and an energy of 1 MeV were implanted into the synthesized nanowires at varying fluence levels, ranging from 1011 to 1013 ions/cm2. The ion implantation process was conducted in the radiation chamber of the Inter-University Accelerator Centre’s low-energy ion implantation facility in New Delhi, India. Stopping and Range of Ions in Matter (SRIM) code simulations were employed to determine the optimal implantation parameters. Compositional analysis confirmed the successful incorporation of argon ions into the CdSe lattice. Notably, scanning electron microscopy revealed no alterations in the nanowire morphology despite the implantation. X-ray diffraction analysis showed no shift in the 2θ position of diffraction peaks, but indicated variations in their intensities. Furthermore, the implanted nanowires exhibited an increased absorbance and improved conductivity with increasing ion fluence. These findings demonstrate the effectiveness of argon ion implantation in modifying the optical and electrical properties of 80 nm diameter CdSe nanowires.

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